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KEY APPLICATIONS
AUTOMOTIVE IGNITION/INJECTION
EcoSPARK ? I and EcoSPARK ? 2 igniters provide 200 to 500mJ SCIS energy ratings. Standard product ranges from
300 to 500V clamp.
Customer specific devices, including Smart IGBT products with a co-packaged control IC can provide maximum dwell,
current limit and other features.
Automotive Ignition
Automotive Injection
Tr1
D1
D2
L1
C1
7805
Piezo Inj.1
Piezo Inj.2
Piezo Inj.3
Piezo Inj.4
VR1
Driver1
D3
IGNITION
SWITCH
CONTROL
MODULE
PWM
Driver2
T2
Driver3
T3
Driver4
T4
Driver5
T5
Driver6
T6
Driver7
T7
+
-
CRANKSHAFT PICKUP
Control Unit
HPH
Shunt1
INTEGRAL COIL AND SPARK
Coil-on-Plug (COP) System Architecture
Piezo Activated Semi-Resonant Direct Injection
IGNITION
SWITCH
CONTROL
MODULE
T1
T2
T3
T4
+
-
CRANKSHAFT PICKUP
T5
T6
T7
T8
T9
T10
INTEGRAL SWITCH, COIL AND SPARK
Switch-on-Coil System Architecture
Common Rail Solenoid Direct Injection (CR-SDI)
VBATTERY
D1
D2
I L
IGNITION
COIL
SPARK
PLUG
C1
7805
VR1
Driver3
L1
T3
L2
C2
C1
Driver1
Driver2
T1
T2
L3
Driver4
T4
C4
Driver5
C3
T5
Driver6
Piezo Inj. 1
T6
Driver7
Piezo Inj. 2
T7
Driver8
Piezo Inj. 3
T8
Piezo Inj. 4
COLLECTOR
I ZENER
I C
Control Unit
Shunt1
ENGINE CONTROL
MODULE (ECM)
GATE
1k
IGBT
Common Rail Piezo Direct Injection (CR-PDI)
10-25k
EMITTER
Typical IGBT Igniter Circuit
6
f a i rc hi l d s e mi.c o m
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相关PDF资料
FDD16AN08A0_NF054
MOSFET N-CH 75V 50A DPAK
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相关代理商/技术参数
FDD16AN08A0_NF054
功能描述:MOSFET 75V 50a .16Ohms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD16AN08A0_NL
制造商:Rochester Electronics LLC 功能描述:- Bulk
FDD16AN08A0_Q
功能描述:MOSFET 75V 50a .16Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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制造商:Fairchild Semiconductor Corporation 功能描述:
FDD18N20LZ
功能描述:MOSFET 200V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD20AN06A0
功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD20AN06A0_10
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 45A, 20mW
FDD20AN06A0_F085
功能描述:MOSFET N-Ch PowerTrench
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube